Electrical Properties of Nitrogen Doped Float Zone Silicon

摘要

Examination of nitrogen doped float zone silicon indicates that electrical properties are similiar to commerical Czochralski material. This material deserves further consideration for use in high power device and intrinsic infrared detector applications. Temperature dependent Hall effect measurements have been made on as received and neutron transmutation doped (NTD) sample of a nitrogen doped float zone silicon crystal to determine its electrical properties. Samples were studied in both as-received state and after various high temperature anneals. Results were compared with commerical n-type Czochralski silicon and conventional neutron doped float zone silcion. Undoped, annealed samples of Si:N showed signs of inhomogeneities were not seen in lightly NTD's and annealed nitrogen doped material, indicating that even light doping will mask effects of the proposed precipitation. No evidence was detected for any electrically active level that could be directly related to the nitrogen.