Theoretical Studies of Deep Impurity Levels in Ternary Semiconductor Alloys

摘要

The principal investigator has completed a sizeable research program studying superlattices, impurities in semiconductors, surface and interface states, Schottky barriers, many-body effects in x-ray and Auger spectra of metals, and the physics of semiconductive alloys. Here we list a few of the recent results pertaining to: Substitutional point defects; laser degradation; Central-cell scattering effects on mobility; Pressure dependence of deep levels; Deep levels in quaternary III-V alloys; Deep levels in Si(x)Ge(1-x)alloys; Deep levels in CuCl; Deep levels in II-VI semiconductors; Hg1-xCdxTe; IV-VI semiconductors; Paired substitutional defects; Technological significance of the theory of paired and clustered defects; Defects at interfaces; Defects at surfaces and Schottky barrier heights; Intrinsic surface state; Intrinsic interface states; Core excitons; Disordered systems; Thermal conductivity of superlattices; Metastable semiconductors; Technological importance of metastable semiconductors; Disordered superlattices; Phonons in III-V alloys; Deep levels in superlattices.