Photo‐deep level transient spectroscopy: A technique to study deep levels in heavily compensated semiconductors

摘要

Photo‐deep level transient spectroscopy (photo‐DLTS), a new technique to study deep levels in high‐resistivity semiconductors, is described, and results of experiments on electron‐irradiated n‐type silicon are presented. In addition to the usual parameters, such as thermal activation energy and capture cross section, the photoionization energy for some defects was also measured. Thus optical and thermal parameters are measured for the same defects in the same sample. This technique should be useful for studying deep levels in materials made semi‐insulating by the introduction of deep levels as compensating centers.