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首页> 外文期刊>Advances in Physics Theories and Applications >A general theoretical design of semiconductor nanostructures with equispaced energy levels: preliminary report for quantum wells in semiconductor ternary alloys (AxB1-xC)
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A general theoretical design of semiconductor nanostructures with equispaced energy levels: preliminary report for quantum wells in semiconductor ternary alloys (AxB1-xC)

机译:半导体纳米结构的一般理论设计具有等化能量水平的概述:半导体三元合金中量子阱的初步报告(AXB1-XC)

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摘要

The purpose of this study is to formulate a general theoretical design of equispaced energy levels for semiconductor nanostructures. Here we present a preliminary report for the design of equispaced energy levels for quantum wells (QWs) in semiconductor ternary alloys (A x B 1-x C). The procedure is by mapping the envelope function Schrodinger equation for a realistic QW, with the local conduction-band edges as the potential experienced by an electron in the QW into an effective-mass Schrodinger equation with a linear harmonic oscillator potential by the method of coordinate transformation. The electron effective mass and potential are then obtained as the signatures for the equispaced energy levels for QWs in semiconductor ternary alloys.
机译:本研究的目的是制定半导体纳米结构的平面能量水平的一般理论设计。在这里,我们提出了用于在半导体三元合金中的量子阱(QWS)的平衡能级的初步报告(X B 1-x C)。该过程是通过将包络函数Schrodinger方程映射到真实的QW,利用局部导通带边缘作为通过坐标的方法具有线性谐振子电位的QW中的电子中所经历的有效质量Schrodinger方程的电位转型。然后获得电子有效质量和电位作为半导体三元合金中QWS的等化能级的签名。

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