SEMICONDUCTOR DEVICES HAVING HETEROJUNCTIONS OF AN ALUMINUM GALLIUM NITRIDE TERNARY ALLOY LAYER AND A SECOND III NITRIDE TERNARY ALLOY LAYER

摘要

A method for forming a semiconductor device having a heterojunction of a first III-nitride ternary alloy layer arranged on a second III-nitride ternary alloy layer is provided. A range of concentrations of III-nitride elements for the first and second III-nitride ternary alloy layers is determined so that the absolute value of the polarization difference at the interface of the heterojunction of the first and second III-nitride ternary alloy layers is less than or equal to 0.007 C/m² or greater than or equal to 0.04 C/m². Specific concentrations of III-nitride elements for the first and second III-nitride ternary alloy layers are selected from the determined range of concentrations so that the absolute value of the polarization difference at the interface of the heterojunction of the first and second III-nitride ternary alloy layers is less than or equal to 0.007 C/m² or greater than or equal to 0.04 C/m². The semiconductor device is formed using the selected specific concentrations of III-nitride elements for the first and second III-nitride ternary alloy layers. The first and second III-nitride ternary alloy layers have a Wurtzite crystal structure. The first III-nitride ternary alloy layer is AlGaN and the second III-nitride ternary alloy layer is InGaN, InAlN, BAlN, or BGaN, or the first III-nitride ternary alloy layer is InGaN and the second III-nitride ternary alloy layer is AlGaN, InAlN, BAlN, or BGaN, or first III-nitride ternary alloy layer is InAlN and the second III-nitride ternary alloy layer is InGaN, AlGaN, BAlN, or BGaN, or the first III-nitride ternary alloy layer is BAlN and the second III-nitride ternary alloy layer is InGaN, InAlN, AlGaN, or BGaN, or first III-nitride ternary alloy layer is BGaN and the second III-nitride ternary alloy layer is InGaN, InAlN, BAlN, or AlGaN.