Repair of X-Ray Lithography Masks Using UV-Laser Photodeposition

摘要

UV-laser photodeposition of cadmium has been adapted to the repair of clear defects in fully fabricated polymide membrane x-ray lithography masks. The spatial resolution of the process has been explored with carbon x-ray exposures and was found adequate for one-step repair of 1 micrometer defects. Repair of smaller features should be possible with photodeposition in combination with ion milling with a focused ion beam. A new photodeposition process has been developed for lead, a material with better x-ray opacity than Cd for many practical x-ray wavelengths. Both materials can be deposited with good edge definition and without damage to the fragile x-ray mask membrane.