Theory of Below-Band-Gap Photoluminescence in a Gallium Arsenide Doping Superlattice

摘要

This report presents a simplified calculation of the photoluminescence spectrum of a gallium arsenide doping superlattice. The electronic states in the conduction band of the superlattice are taken to be harmonic oscillator-like in the doping direction and free particle-like in the transverse directions. Localized acceptor states above the valence band are represented by spherically symmetric hydrogenic functions. Analytic expressions for the electric dipole matrix element between these states are obtained and are employed in the numerical evaluation of the spectrum for different electron hole distribution functions. Keywords: Doping, superlattice, photoluminescence, gallium arsenides.