Linear Electro-Optic Effect in Ge(x)Si(1-x)/Si Strained-Layer Superlattices

摘要

The bond-charge model of Jha and Bloembergen has been extended to ordered, pseudodiamond Ge(x)Si(1-x)/Si superlattices to calculate the pockels coefficient and the second-order susceptibility of these structures. We find that the Pockels coefficient is approximately 1 x 10 to the -10th power m/V over the near-infra-red range.