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Atomistic Nature of Heterointerfaces in III-V Semiconductor-Based Quantum-Well Structures and Its Consequences for Photoluminescene Behavior. (Reannouncement with New Availability Information).

机译：基于III-V半导体的量子阱结构中异质界面的原子性及其对光致发光行为的影响。（重新公布新的可用性信息）。

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作者
Ogale, S. B.; Madhukar, A.; Voillot, F.; Thomsen, M.; Tang, W. C.;
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年度 1987
页码 1-12
总页数 12
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Photoluminescence; Gallium arsenide lasers; Monte carlo method; Lattice dynamics; Reprints; Quantum wells;

机译：光致发光;砷化镓激光;蒙特卡罗方法;晶格动力学;重印;量子阱;

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Atomistic Nature of Heterointerfaces in III-V Semiconductor-Based Quantum-Well Structures and Its Consequences for Photoluminescene Behavior. (Reannouncement with New Availability Information).

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