Magnetoexcitons in a GaSb-AlSb-InAs Quantum-Well Structure. (Reannouncement withNew Availability Information)

摘要

We study theoretically the magnetoexcitons in a GaSb-AlSb-InAs quantum-wellstructure.Two numerical approaches, a variational and an expansion method, have been proposed to study the exciton ground state.The exciton binding energy has been found to increase with increasing applied magnetic field, along with quantum-well structure parameters, determines the condition under which the system undergoes transition from semiconductor to exciton phase. The excited states of the magnetoexctions have also been studied with the application of the expansion method. (Author)