Arsenic Growth on the Gallium Arsenide Surface during Oxidation

摘要

Crystalline arsenic was observed to grow on the surface of GaAs during exposure to continuous-wave laser radiation. A study of the time development of the arsenic growth as revealed by Raman backscattering indicated that a surface diffusion process was responsible for limiting the growth process. Temperature measurements were performed from which the diffusion barrier energies were obtained for various GaAs samples. From these results the diffusion process was shown to depend on the Fermi level of sample. Keywords: Raman scattering, Oxide growth, Surface diffusion, Barrier energies, Gallium arsenides, Cadmium tellurides.