Picosecond Optoelectronic Sampling of Electrical Waveforms Produced by an Optically Excited Field Effect Transistor

摘要

Picosecond optoelectronic techniques were used to measure the electrical response of a submicron gate GaAs FET to optical excitation by picosecond laser pulses. Results indicated that carrier transport in these devices is strongly affected by screening of the applied electrical bias at high optical excitation levels. The use of these devices as ultrafast photodetectors and as generators of ultrafast transient electrical waveforms on GaAs integrated circuits was discussed.