Temperance Dependence of Shunt Resistance in Photovoltaic Devices

摘要

Shunt resistance in surface passivated Si solar cells has been experimentally shown to be temperature dependent with a maximum value of 2x10 to the 7th power ohms/sq. cm. Mechanisms responsible for shunt resistance are identified as a combination of multistep tunneling and thermal trapping-detrapping of carriers through the defect states in the space-charge region.