Acoustic Phonon Scattering in Modulation Doped Aluminum sub x Gallium sub (1-x) Arsenide/Gallium Arsenide Heterojunctions

摘要

We investigate acoustic deformation potential scattering in A1(x)Ga(1-x)As/GaAs modulation doped heterojunctions. We review previous measurements of the deformation potential constant Z and discuss the controversy over the discrepancy between the measured value of Z in bulk GaAs and in the heterojunction. By comparing the theory of scattering in bulk GaAs with previously reported measurements of the mobility at 77K we determine an upper limit for the deformation potential constant of 11 eV. We experimentally measure the relationship between the electron temperature and the power loss, and we compare our measurements with theory. We conclude, in general agreement with previous measurements in heterojunctions, that a large value of the deformation potential constant (approximately 16 eV) would be necessary to fit the data using a theory of acoustic phonon scattering. Keywords: Acoustic deformation potential scattering, Modulation doped heterojunctions, Deformation potential, Theory of scattering, Power loss. (JES)