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Dissociation Dynamics of Low-Lying Electronic States of SiH2

机译:siH2低电子态的解离动力学

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摘要

Essential features of the potential surfaces for low-lying electronic states of silylene, SiH2, have been characterized. Calculated transition energies between the X1A1,a3B1, and A1B1 states are in agreement with previously published experimental and theoretical values. (Reprints, silanes). (MJM)

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