NDP (Neutron Depth Profiling) Evaluations of Boron-Implanted Compound Semiconductors

摘要

This report describes recent neutron depth profiling (NDP) experiments on the distribution of implanted boron in several semiconductors. The objectives are to compare the boron profiles for different materials that had been simultaneously implanted and to assess the effects of annealing treatments that were used to remove implant damage and electrically activate the boron.