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Probing the magnetic profile of diluted magnetic semiconductors using polarized neutron reflectivity

机译:利用极化中子反射率探测稀磁半导体的磁分布

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摘要

Room temperature ferromagnetism has been observed in the Cu doped ZnO films deposited under an oxygen partial pressure of 10−3 and 10−5 torr on Pt (200 nm)/Ti (45 nm)/Si (001) substrates using pulsed laser deposition. Due to the deposition at relatively high temperature (873 K), Cu and Ti atoms diffuse to the surface and interface, which significantly affects the magnetic properties. Depth sensitive polarized neutron reflectometry method provides the details of the composition and magnetization profiles and shows that an accumulation of Cu on the surface leads to an increase in the magnetization near the surface. Our results reveal that the presence of the copper at Zn sites induces ferromagnetism at room temperature, confirming intrinsic ferromagnetism.
机译:在Pt(200 nm)/ Ti(10(sup> −3 )和10 -5 torr的氧分压下沉积的掺杂Cu的ZnO薄膜中已观察到室温铁磁性。 45 nm)/ Si(001)基板,使用脉冲激光沉积。由于在相对较高的温度(873 K)下进行沉积,因此Cu和Ti原子扩散至表面和界面,从而显着影响磁性能。深度敏感极化中子反射法提供了成分和磁化曲线的详细信息,并表明表面上Cu的积累导致表面附近磁化强度的增加。我们的结果表明,在Zn位点存在铜会在室温下感应出铁磁性,从而证实了固有的铁磁性。

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