Integration of Detectors and Optical Waveguide Structures

摘要

Integrated detection of light propagating in an optical waveguide with a photodetector array fabricated directly on the waveguide surface has been demonstrated. Devices having very good performance were formed by depositing polycrystalline silicon and laser recrystallizing it prior to device fabrication. The use of two lasers has been shown to result in improved recrystallization. An analysis of a four-layer optical waveguide structure has been performed and applied to multiple layer gallium-aluminum-arsenide structures and Si02/Si structures. Numerical calculations of waveguide attenuation due to substrate coupling for thermally-nitrided silicon dioxide and for gallium aluminum arsenide waveguides have been performed for a variety of layer thicknesses, layer material compositions, and wavelengths. Comparison with some experimental data has been carried out. Extensive Raman microprobe characterization has also been performed on laser recrystallized silicon and on GaAlAs dielectric strip waveguide structures. use of rapid thermal annealing to initiate in-diffusion of Ti into LiNb03 has yielded low loss optical waveguides. (RH)