Studying the Physics and Operation of Multi-Terminal Near-Micron and Sub-Micron Length, Hot Electron Semiconductor Devices

摘要

The study encompasses a broad examination of transport in submicron and near-micron semiconductor devices through implementation of the moments of the Boltzmann transport equation and the semiconductor drift and diffusion equation. The study utilized advanced algorithms developed at Scientific Research Associates, and recommends development of a network of user based algorithms for closely combined theoretical/experimental interactions.