Near-Band Gap Optical Behavior of Sputter Deposited alpha- and alpha + Beta-ZrO2 Films.

摘要

The functional dependence of the optical absorption coefficient on photon energy in the 4.9-6.5 eV range was determined for alpha and alpha + beta-ZrO2 films grown by reactive sputter deposition on fused silica. Two allowed direct interband transitions in alpha-ZrO2 were identified, with energies equal to 5.20 and 5.79 eV. Modification of these transitions in alpha + beta-ZrO2 is reported. Reprints. (rrh)