Optical Properties of Zinc Selenide Grown Using Molecular Beam Deposition Techniques.

摘要

Many optical applications are currently being found for II-VI semiconductors such as Zinc Selenide (ZnSe). Applications, like anti-reflection coatings, optical limiters, or as part of more complicated structures for use as optically non-linear switches with potential use in optical signal processing and optical computing cover just a selection of uses. For the first time the refractive index of Molecular Beam Deposition grown Zinc Selenide films has been measured for three different growth temperatures and the wavelength and temperature dispersions quantified. Permanent absorption, but not refractive index, changes have been identified for the first time. Possible origins of the changes are conjectured along with the significant effects they will cause in optically bistable devices. Future studies are outlined which it is hoped will go some way towards producing better quality material and thus devices. Great Britain. (aw)