Thermal Model for Double-Drift IMPATT Diodes on Diamond Heat Sinks

摘要

A thermal model of double-drift IMPATT diodes on diamond heat sinks has been developed. The thermal model approximates the temperature-dependent thermal conductivities of Si and diamond (Type II) by means of simple empirical formulas. The application of the thermal model to three IMPATT diode lits indicates that under life test, junction temperatures are greater than 700 C, while the metal/Si interface temperatures exceed 500 C. An explanation of the failure mechanism is presented. Designs that result in a lower junction temperature are proposed. (RH)