Point Defects in Semiconductors: Microscopic Identification, Metastable Properties, Defect Migration, and Diffusion

摘要

The goal of the research program described herein was to provide insight into the identity and properties of point defects in semiconductors. Particular emphasis was devoted to problems involving microscopic identification, metastable properties, defect migration, and diffusion of point defects in semiconductors. Our approach was to apply atomistic thermodynamic theory, Monte Carlo simulation, and experimental analysis to elucidate the nature and properties of semiconductor defects. Significant progress has been made in the following seven areas: 1) recombination enhanced vacancy migration in silicon, 2) Monte Carlo simulation of diffusion in semiconductors, 3) phosphorous vacancy nearest-neighbor hopping in InP, 4) entropy of migration for atomic hopping, 5) EL2/EL0 identification in GaAs, 6) characterization and identification of DX in A1GaAs, and 7) temperature dependence of band offsets.