Finite Element Modeling and Thermal Simulations of Transistor Integrated Circuits.

摘要

This report documents finite element thermal simulations of the driver amplifier of a C-band transmit/receive radar module currently under life test at the Rome Air Development Center. Steady state and transient finite element thermal simulations were performed to determine the temperature distribution within the gate regions of the transistor cells of a gallium arsenide chip. Other accomplishments include identification of the proper finite element modeling procedures and techniques and investigation of correlating infrared thermal measurements with finite element analytical results. (RRH)