New Method for Measuring Trace Elements in II-VI Semiconducting Materials.

摘要

A new method for determining three trace elements in II-VI semiconducting materials was investigated. Three elements Copper, Iron, and Indium were chosen due to their deleterious impact on the electro-optical characteristics of the semiconductor, as well as the inability of currently available analytical techniques to determine these elements at critical levels (sub ppm by weight). Recoveries and detection limit studies in CdTe material show that the technique of solid sampling graphite furnace atomic absorption is superior to mass spectrometric (SS, ICP, and GD) and optical emission (ICP and DCP) techniques. Moreover, results obtained to data indicate that further reduction of detection limits can be achieved.