Analysis of Conduction in Fully Depleted SOI (Silicon-on-Oxide) MOSFET's

摘要

The conduction characteristics of fully depleted SOI MOSFET's have been studied by theoretical analysis and computer simulation. In these devices the ideal inverse subthreshold slope of 59.6 mV/decade will be obtained if the interface-state capacitances are much smaller than the gate-oxide capacitances. For above-threshold conduction, with decreasing silicon film thickness the inversion charges penetrate more deeply into the film and the transconductance increases because of the decreasing fraction of surface conduction. Reprints. (RH)