Workshop on MQW Mixing and its Application to Optoelectronic Devices

摘要

Partial Contents: GaInAs(P)-InP MQW Mixing by Zn Diffusion, Ge and S Implantation for Optoelectronic Applications, Cation Diffusion in InP/In(0.53)Ga(0.47)As Superlattices: Strain Build-Up and Relaxation, Advanced Materials Characterisation of Electronic Device Structures, Order-Disorder Ternary Alloys by Atomic Layer Epitaxy, Disordering of Superlattices for Laser Applications, Non-Destructive Characterisation of A1As/GaAs Superlattices by Optical Reflection, Disordered Delineated Waveguides in GaA1As/GaAs and GaInAs/InP MQW Structures, Post Growth Tailoring of the Optical Properties of GaAs-A1GaAs Quantum Well Structures, Partial Intermixing of Strained InGaAs/GaAs Quantum Wells, and Future Trends. (rrh)