Brief description of embodiments of a device optoelectronics amplifier device obtained by this process and applications of the various devices optoelectronic.

摘要

In particular, the invention concerns a method of producing an optical amplifier according to which a stack is made of the following layers by epitaxy: & br / - guiding layer 3, & br / - chemical etching stop layer 4, & br / - guiding layer 5, & br / - stop layer for chemical etching, & br / - active layer 7, & br / - confinement layer 8, & br / - contact layer 9. & br / is then etched in these layers of at least one amplifier element (layers 7, 8 and 9) and of an optical guide, which is located under this amplifier element (layers 3, 4, 5). br / applications: embodiment of the optoelectronic devices such as modulators, switches, distributors, etc..