Transient Annealing Characterization of Irradiated MOSFETS

摘要

The electrical response of metal-oxide-silicon (MOS) technologies to incidentnuclear (especially photon) radiation is a very complex, time-dependent function. This report reviews the physical processes governing this response and then experimentally examines them with the aid of the TATS-400 (Transient Annealing Test System). MOSFET responses to steady-state and pulsed photon and electron beams are characterized in terms of such parameters as threshold voltage shift and interface and oxide trap densities. The results show good agreement between experiment and theory in terms of the expected trends, however in order to conduct more meaningful tests, devices with much better-known geometries must be procured. Keywords: Transient radiation effects on electronics; Metal-oxide-silicon field effect transistor; Nuclear radiation; Gamma rays; Electrons; Holes; Dose; Dose rate; Annealing; Canada. (rh)