Lattice-Mismatched In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As Modulation-Doped Field-Effect Transistors on GaAs: Molecular-Beam Epitaxial Growth and Device Performance

摘要

We describe here the properties of In0.53Ga0.47As/In0.52Al0.48As modulation-dopedheterostructures and field-effect transistors grown directly by molecular-beam epitaxy on GaAs substrated. The generation and nature of dislocations in the films have been studied by transmission-electron microscopy. The final heterostructure contains a series of compositional. The drain current variation with gate bias is linear and the transconductance is uniform over a sizeable voltage range.