Modulation Bandwidth of High-Power Single-Mode Semiconductor Lasers: Effect ofIntraband Gain Saturation

摘要

The effect of intraband gain saturation on the modulation bandwidth of single-mode semiconductor lasers is discussed by using a nonperturbative form of the optical gain that is valid at high-power levels. The small-signal analysis of the modified rate equations is used to predict the power dependence of the modulation bandwidth. The results are used to discuss the ultimate modulation bandwidth of InGaAsP distributed feedback semiconductor lasers and its dependence on various device parameters. Reprints. (rrh)