Calibration Method for Group V Fluxes and Impact of V/III Flux Ratio on the Growth of InAs/InAsSb Type-II Superlattices by Molecular Beam Epitaxy.

摘要

A calibration method for group V fluxes is demonstrated for the growth of InAsxSB1-x alloys and strain-balanced InAs/InAsxSB1-x superlattices on GaSB substrates by molecular beam epitaxy for IR optoelectronic device applications. The structural and optical properties of these structures grown with varying V/III flux ratios are investigated using several characterization methods, including X-ray diffraction (XRD), photoluminescence (PL), and reflection high energy electron diffraction. Samples grown at 450 deg C with Sb/In flux ratios from 1.0 to 2.0 and As/In flux ratios from 1.2 to 2.5 ;ead to Sb mole fractions randing from 0.078 to 0.34. High structural and optical quality superlattices for Sb mole fractions up to 0.34 are verified by XRD and low-temperature PL measurements. When varying both Sb mole fraction and period, superlattice structures are demonstrated with low temperature emission wavelengths ranging from 3.6 to 7.1 micro m.