In BASED III-V Microstructures with Novel Electronic Properties

摘要

This program addresses the development of microstructures for high density andhigh speed electronics. The molecular beam epitaxy technology for InAs and GaSb were developed for growth on GaAs substrates. Three new single barrier negative resistance devices were demonstrated. Double barrier negative resistance devices based on InAs/AlSb/InAs/AlSb/InAs heterostructures were fabricated. These currently hold all the power and frequency records.