首页> 美国政府科技报告 >Persistent Photoconductivity in II-VI Mixed Semiconductors Related CriticalPhenomena and Applications
【24h】

Persistent Photoconductivity in II-VI Mixed Semiconductors Related CriticalPhenomena and Applications

机译:II-VI混合半导体中持久的光电导相关的临界现象和应用

获取原文

摘要

During the period of Aug 1, 1990 to Jan 31, 1991, the following researchactivities have been carried out in studying persistent photoconductivity (PPC) in II-VI mixed semiconductors and related device applications: (1) New Type of Materials, (2) PPC in II-VI Semiconductor Thin Films, (3) Comparison Between II-VI and III-V Semiconductors and (4) PCC Transient Behavior. (Author)

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号