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Bias Circuit Instabilities and their Effect on the d.c. Current-VoltageCharacteristics of Double-Barrier Resonant Tunneling Diodes

机译：偏置电路不稳定性及其对直流电压的影响双势垒谐振隧穿二极管的电流 - 电压特性

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作者
Kidner, C.; Mehdi, I.; East, J. R.; Haddad, G. I.;
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年度 1991
页码
总页数 9
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Tunneling(Electronics); Reprints;

机译：隧道（电子）;重印;

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1. An improved multipeak resonant tunneling diode model for nine-state resonant tunneling diode memory circuit simulation [J] . Chih Yuan Huang, Morris J.E. IEEE Transactions on Electron Devices . 1995,第9期

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2. Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers [J] . Hiroaki Hanafusa, Nobumitsu Hirose, Akifumi Kasamatsu, Annales de l'I.H.P . 2011,第2期

机译：在溅射的平坦Ge层上形成的Si / Ge空穴隧穿双势垒共振隧穿二极管
3. The Effect of Spacer Thicknesses on Si-Based Resonant Interband Tunneling Diode Performance and Their Application to Low-Power Tunneling Diode SRAM Circuits [J] . Niu Jin, Sung-Yong Chung, Ronghua Yu, IEEE Transactions on Electron Devices . 2006,第9期

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4. Compact models of the double-barrier resonant tunneling diode [C] . Moskaliuk Volodymyr, Saurova Tetiana Institute of Electrical and Electronics Engineers International Conference on Electronics and Nanotechnology . 2015

机译：双势垒共振隧穿二极管的紧凑模型
5. Impedance, equivalent circuit and capacitance of double-barrier resonant tunneling diode [D] . Wei, Tao 1995

机译：双势垒谐振隧穿二极管的阻抗，等效电路和电容
6. Terahertz Emitter Using Resonant-Tunneling Diode and Applications [O] . Masahiro Asada, Safumi Suzuki 2021

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7. Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers [O] . Hanafusa H, Hirose N, Kasamatsu A, 2011

机译：溅射平面Ge层上形成的si / Ge空穴隧穿双势垒谐振隧道二极管

Bias Circuit Instabilities and their Effect on the d.c. Current-VoltageCharacteristics of Double-Barrier Resonant Tunneling Diodes

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