Process-Dependence of Properties in High Thermal Conductivity Aluminum NitrideSubstrates for Electronic Packaging

摘要

Recent advances in high performance electronic devices, such as high speedVLSI's, logic circuits, and high power transistors have produced devices with a higher circuit density that produce a large amount of heat. Aluminum oxide is currently the most commonly used substrate material in microelectronic packaging. However, its low thermal conductivity and high coefficient of expansion have led researchers to investigate other materials. The properties of A1N substrate material compare well with those of the other substrate materials. In addition to a thermal conductivity up to ten times that of Al2O3, A1N has a coefficient of thermal expansion that is closer to that of silicon. Beryllium oxide has a higher thermal conductivity than A1N, however its coefficient of thermal expansion is significantly higher than that of silicon, and its high toxicity creates handling problems during manufacture that lead to high production costs.