Theory of Electronic Transport in Low Dimensional Semiconductor Microstructures

摘要

I discuss complementary theoretical aspects of electronic transport in lowdimensional semiconductor microstructures emphasizing, in particular, novel transport mechanisms and quantitative comparisons with experiments. The two specific topics discussed are: (a) the temperature dependence of low temperature (4-40K) ohmic mobility in two dimensional modulation-doped ultra high mobility GaAs heterostructures; and, (b) the conductance quantization phenomenon in the ballistic transport properties of quasi-one-dimensional constrictions or quantum point contacts. These two examples, respectively, bring out characteristic features of the physical aspects of diffusive and ballistic transport in low dimensional microstructures. I also present some calculated numerical results for elastic and inelastic mean free paths in low dimensional GaAs structures.