Metamorphic InAsSb/AlInAsSb Heterostructures for Optoelectronic Applications.

摘要

Metamorphic heterostructures containing bulk InAs(1-x)Sbx layers and AlInAsSb barriers were grown on GaSb substrates. The lattice mismatch (up to 2.1%) between the GaSb substrates and the InAsSb layers was accommodated by the growth of GaInSb linearly graded buffers. The 1 micrometers thick InAsSb(0.44) layer with an absorption edge above 9 micrometer exhibited an in-plane residual strain of about 0.08%. InAs(1-x)Sbx structures with x=0.2 and x=0.44 operated as light emitting diodes at 80K demonstrated output powers of 90 muW and 8 muW at 5 micrometer and 8 micrometer, respectively.