Measurement of Reflection High-Energy Electron Diffraction Oscillations duringMolecular-Beam Epitaxial Growth of GaAs on a Rotating Substrate. (Reannouncement with New Availability Information)

摘要

A technique has been developed for the measurement and analysis of reflectionhigh-energy electron diffraction (RHEED) oscillations occurring during molecular-beam epitaxy on a rotating substrate. Previously, it has been necessary to stop substrate rotation in order to perform oscillation analysis. This limitation has been overcome by combining a computerized video tracking system with a previously reported technique for frequency-domain analysis.... Molecular-beam epitaxy, Epitaxy, RHEED analysis.