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Combined Rayleigh and Raman Scattering Study of Al(x)Ga(1-x)As Grown via Molecular Beam Epitaxy Under Reflection High-Energy Electron Diffraction Determined Growth Conditions. (Reannouncement with New Availability Information).

机译：反射高能电子衍射测定生长条件下分子束外延生长al（x）Ga（1-x）as的Rayleigh和Raman散射组合研究。（重新公布新的可用性信息）。

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作者
Tang, W. C.; Lao, P. D.; Madhukar, A.; Cho, N. M.;
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年度 1988
页码 1-4
总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Epitaxial growth; Aluminum gallium arsenides; Molecular beams; Light scattering; Rayleigh scattering; Raman spectra; Electron diffraction; Reprints; Molecular beam epitaxy;

机译：外延生长;砷化铝镓;分子束;光散射;瑞利散射;拉曼光谱;电子衍射;重印;分子束外延;
入库时间 2022-08-29 11:25:44

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3. Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy [J] . Dillip K.Satapathy, Bemd Jenichen, Klaus H.Ploog, Journal of Applied Physics . 2011,第2期

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5. Reflection high-energy electron diffraction during molecular-beam epitaxy. [D] . van der Wagt, Jan Paul Antoni. 1995

机译：分子束外延过程中的反射高能电子衍射。
6. Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing [O] . Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, 2014

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7. Publisher’s Note: “Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy” J. Appl. Phys. 110, 023505 (2011) [O] . Dillip K. Satapathy, Bernd Jenichen, Klaus H. Ploog, 2011

机译：发行商注意：“通过分子束外延对GaAs（001）的MNA生长的”方位角反射高能量电子衍射研究“J。苹果。物理。 110,023505（2011）
8. Measurement of Reflection High-Energy Electron Diffraction Oscillations duringMolecular-Beam Epitaxial Growth of GaAs on a Rotating Substrate. (Reannouncement with New Availability Information) [R] . Turner, G. W., Isles, A. J. 1992

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Combined Rayleigh and Raman Scattering Study of Al(x)Ga(1-x)As Grown via Molecular Beam Epitaxy Under Reflection High-Energy Electron Diffraction Determined Growth Conditions. (Reannouncement with New Availability Information).

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