Damage Modes and Mechanisms of Si-Ge Films under Prompt Soft X-ray Radiation

摘要

Thermal and residual stresses in films exposed to sudden temperature changes areanalyzed based on an elastoplastic-brittle idealization of film response. The results thus obtained are used to explain qualitatively the damage mechanisms of various failure modes observed iii Si-Ge film deposited on a single crystal Si substrate exposed to soft x-ray radiation for a short duration of time.