Identification of the Gas-Phase Products which Occur during the Deposition of AlNUsing the Organometallic Precursor: ((CH3)2AlNH2)3

摘要

Molecular beam-mass spectrometry is used to analyze the gas-phase productsoccurring during chemical vapor deposition (CVD) of aluminum nitride using tris-dimenthylaluminum amide, (I), as a precursor. By correlating the ion signals in the mass spectra for the case of I to the ion signals in the mass spectra of the deuterated analogue, it is possible to assign tentative structures to the ion signals in the mass spectra of the gas flow emerging from the reactor. It is shown that time-of-flight velocity spectra can be used to determine the molecular weight of the species which generate the ion signals in the mass spectra. For the case of high pumping speeds or short reactor residence times, the time-of-flight velocity spectra indicate that the trimeric form of the precursor is the only species present in the gas phase at a reactor temperature of 100 C. However, at low pumping speeds the time-of-flight velocity spectra support the existence of dimeric as well as trimeric forms of the precursor at a reactor temperature of 100 C. (Author)