Fundamental Studies of the Morphology, Chemistry, and Electrical Properties ofMetals on GaAs and other III-V Semiconductor Compounds

摘要

A large effort has been placed to understand and develop passivation for the III-V surfaces. Although the major objective of these studies, to develop practical passivation for III-V devices other than heterojunctions (e.g. A1GaAs), is still unresolved (due to chemical instability of coatings in atmosphere) large progress in the understanding of many basic phenomena has been made. Our studies concentrated on two avenues. Firstly we explored the use S based solutions (Na2S, (NH4)2S etc ) which markedly reduce surface recombination at the GaAs(100) surface. Secondly we studied the Sb interlayers on both GaAs and InP surfaces as an intermediate reaction barriers for passivating layer