Analysis of Semi-Insulating Bulk GaAs Using Glow Discharge Mass Spectrometry.

摘要

The ability to perform sub-part per billion (ppb) analysis of semi-insulating (SI) GaAs substrate material is of critical importance for the development of electronic materials used in microelectronic device applications. Glow discharge mass spectrometry (GDMS) is commonly used to perform high sensitivity (part-per-trillion) measurements of metals and semiconductors. Since the sample is utilized as the cathode in a DC glow discharge, it must be conducting to some degree. Thus analysis of SI wafers presents major difficulties. Possible solutions include the use of a high purity mask or the mixing of pulverized sample material with high purity powder. Due to the finite purity of available materials, these methods have limitations. This study has resulted in the development of a novel method to perform maskless analysis of SI wafers with sub-ppb sensitivity across virtually the entire periodic table. This method has been utilized in various studies related to electronic device applications. GaAs, Trace analysis, Glow discharge mass spectrometry, Semi-insulating, Bulk chemical characterization.