Infrared Imaging Array Integrated in Three Dimensions Directly on Top of Silicon Circuits.

摘要

We have demonstrated the first three dimensional integration of a high quality compound semiconductor infrared imaging detector array directly on top of a foundry-produced silicon neuromorphic image processing circuit. There is great potential for this new technology in neuromorphic image processing applications. This new ability to construct complex locally connected neuromorphic focal-plane processors with direct massively parallel connections to high quality compound semiconductor imaging arrays will lead to new levels of sophistication in focal-plane processing. During this research, thin film p-i-n and metal-semiconductor-metal (MSM) detectors were fabricated and tested. A four-by-four array of detectors was integrated onto a metallized silicon substrate and directly on top of an array of silicon circuits. The yield of each of these arrays was 100%, i.e., every detector was functional, and, in the integration onto silicon circuitry, every circuit underneath the detectors was also functional.