Frequency Modulation Locking in 980nm Strained Quantum Well Lasers

机译：980nm应变量子阱激光器中的调频锁定

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The fundamental and second-harmonic spectral characteristics of frequencymodulation locking have been observed in strained-layer InGaAs quantum well Fabry-Perot ridge-waveguide lasers emitting at 980 nm.

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Chinn, S. R.; Wang, C. A.; Evans, G. A.;
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年度 1993
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总页数 3
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Solid state lasers; Quantum wells; Reprints; Second harmonic generation; Galliumarsenides; Frequency modulation; Fabry perot interferometers; Arsenides; Indium; Locking(Electronics);

机译：固态激光器;量子阱;重印;二次谐波产生; Galliumarsenides;频率调制;法布里perot干涉仪;砷化物;铟;锁定（电子）;

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专利

1. Frequency modulation locking in 980 nm strained quantum well lasers [J] . Chinn S.R., Wang C.A. Electronics Letters . 1993,第8期

机译：980 nm应变量子阱激光器中的调频锁定
2. High-frequency modulation characteristics in 1.5 mu m compressively strained multiquantum well lasers with large number of wells [J] . Murata S., Naniwae K. Electronics Letters . 1992,第15期

机译：1.5微米压缩应变多量子阱激光器中的高频调制特性
3. High-power operation of weakly index guided buried-stripe type InGaAs strained quantum-well 980nm laser diodes [J] . Hideyoshi Horie, Nobuhiro Arai, Naoyuki Komuro, 電子情報通信学会技術研究報告. レ-ザ·量子エレクトロニクス. Lasers and Quantum Electronics . 2001,第174期

机译：大功率工作的弱折射率导引埋藏式InGaAs应变量子阱980nm激光二极管
4. Pure strain effect on high-frequency modulation capability of InP-based strained-layer multiple-quantum-well lasers [C] . Seki, S., Yamanaka, . 1993

机译：纯应变对基于InP的应变层多量子阱激光器的高频调制能力的影响
5. Design, analysis and fabrication technology for 1.55 micron strained and strain-compensated multiple quantum well single frequency lasers. [D] . Lin, Chih-Hsien. 1996

机译：1.55微米应变和应变补偿多量子阱单频激光器的设计，分析和制造技术。
6. Optical Frequency Metrology of an Iodine-Stabilized He-Ne Laser Using the Frequency Comb of a Quantum-Interference-Stabilized Mode-Locked Laser [O] . Ryan P. Smith, Peter A. Roos, Jared K. Wahlstrand, 2007

机译：使用量子干扰稳定锁模激光器的频率梳对碘稳定的He-Ne激光器的光频率计量
7. Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs [O] . Yang GW, Xu ZT, Xu JY, 1998

机译：使用新型InGaAsP和AlGaAs混合材料系统生长和制备高性能980nm应变InGaAs量子阱激光器
8. Very High Efficiency GaInAsP/GaAs Strained-Layer Quantum Well Lasers(Lambda=980nm) With GaInAsP Optical Confinement Layers. (Reannouncement with New Availability Information) [R] . Groves, S. H., Walpole, J. N., Missaggia, L. J. 1992

机译：具有GaInasp光学限制层的超高效GaInasp / Gaas应变层量子阱激光器（Lambda = 980nm）。（重新公布新的可用性信息）

Frequency Modulation Locking in 980nm Strained Quantum Well Lasers

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