High-power operation of weakly index guided buried-stripe type InGaAs strained quantum-well 980nm laser diodes

摘要

Increasing demands of DWDM communication require higher optical output power from InGaAs strained quantum-well 980 nm laser diodes (LDs), which are an essential pumping source for EDFA applications. To this end, we have fabricated buried-stripe type 980 nm LDs that possess a weakly index guided structure with an effective refractive index step (Δn{sub}(eff)) of 3.5×10{sup}(-3). As a result, we have achieved more than 500 mW single transverse-mode operation. In addition, the LDs have shown very stable characteristics under 350 mW and 400 mW constant output power mode aging more than 3,600 hours.