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Quantum well lasers with strained quantum wells and dilute nitride barriers
Quantum well lasers with strained quantum wells and dilute nitride barriers
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机译:具有应变量子阱和稀氮化物势垒的量子阱激光器
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摘要
In accordance with the present invention, GaAs-based optoelectronic devices have an active region that includes a well layer composed of a compressively-strained semiconductor that is free, or substantially free, of nitrogen disposed between two barrier layers composed of a nitrogen- and indium-containing semiconductor.
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