MBE Growth, Characterization and Electronic Device Processing of Hg-Based Semiconductor Alloys and Heterostructures.

摘要

The main objective of this contract was to improve the crystal quality of CdTe(111)B grown directly on silicon (100) substrate. At the starting date of this contract (Sept 1990) the best CdTe(111)B grown on Si(100) had double crystal x-ray rocking curves (DCRC) FWHM of 460 arcsec. These layers were exhibiting double domains and wer plagued by microtwins. At the end of this contact we are routinely growing single-domain twin-free CdTe(111)B epilayers on Si(100). The best DCRC FWHM are of 100 arcsec which is equivalent of better to th at of CdTe grown on Si with a buffer layer such as GaAs or (Ca,Ba)F2. The drastic improvement is due to a systematic investigation of the Si substrate tilt, an understanding of the driving forces for double-domain and microtwin suppression along with a precise control of the growth parameters.