Laser-Assisted Chemical Vapor Deposition of InN on Si(100)

摘要

Laser-assisted chemical vapor deposition of InN on Si(100) using HN3 andtrimethyl indium (TMIn) with and without 308-nm photon excitation has been studied with XPS, UPS and SEM. Without 308-nm excimer laser irradiation, no InN film was built on the surface under the present low-pressure conditions. When the